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SUM60N02-3m9P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
150
120
1000
Limited b y r DS(on) *
100
10 μ s, 100 μ s
90
1 ms
Package Limited
60
30
10
T C = 25 °C
Single P u lse
10 ms
100 ms
1 s, 10 s, DC
0
1
0
25
50
75
100
125
150
175
0.1
1
10
100
1
0.1
0.01
T A - Am b ient Temperat u re (°C)
Drain Current vs. Ambient Temperature
D u ty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
V DS - Drain-to-So u rce V oltage ( V )
* V GS > minim u m V GS at w hich r DS(on) is specified
Safe Operating Area
10 -4
10 -3
10 -2
10 -1
1
1 0
S qu are W a v e P u lse D u ration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?69820.
Document Number: 69820
S-80183-Rev. A, 04-Feb-08
www.vishay.com
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